Originally Aired - Tuesday, December 10 • 4:25 PM - 4:50 PM PST
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Location: Continental 6
Title: 25-5 | 10 kV, 250 oC Operational, Enhancement-Mode Ga2O3 JFET with Charge-Balance and Hybrid-Drain Designs
Description:
Authors: Yuan Qin, Virginia Polytechnic Institute and State University|Zineng Yang, Virginia Polytechnic Institute and State University|Hehe Gong, Virginia Polytechnic Institute and State University|Alan Jacobs, U.S. Naval Research Laboratory|Joseph Spencer, U.S. Naval Research Laboratory, Virginia Polytechnic Institute and State University|Matthew Porter, Virginia Polytechnic Institute and State University|Bixuan Wang, Virginia Polytechnic Institute and State University|Kohei Sasaki, Novel Crystal Technology|Chia-Hung Lin, Novel Crystal Technology|Marko Tadjer, U.S. Naval Research Laboratory|Yuhao Zhang, Virginia Polytechnic Institute and State University
We report the first 10 kV Enhancement-mode (E-mode) power transistor in ultra-wide bandgap (UWBG) materials. This lateral Ga2O3 JFET deploys a highly-doped p-type NiO for E-mode gate, as well as the lowly-doped NiO superjunction and hybrid-drain structures for electric field management. The device sets a new record of Baliga’s FOM in all 3kV+ UWBG transistors. Moreover, the device maintains E-mode operation and >10 kV breakdown voltage at high temperatures up to 250 oC. This is the first report of 250 oC operation as well as HTRB and HTGB reliability data in all high-voltage transistors beyond SiC and Si.
Type: Technical Session
Tuesday, December 10, 2024 - 02:15 PM
25 | PMA| High Voltage Wide Bandgap Power Devices
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