Wednesday, December 11 • 9:05 AM - 9:30 AM PST
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Location: Grand Ballroom A
Title: 30-1 | Superior Scalability of Advanced Horizontal Channel Flash For Future Generations of 3D Flash Memory
Description:
Authors: Minoru Oda, Kioxia Corporation|Kosuke Sakamawari, Kioxia Corporation|Shunichi Seno, Kioxia Corporation|Yuki Nakata, Kioxia Corporation|Ryo Fukuoka, Kioxia Corporation|Haruka Kusai, Kioxia Corporation|Keiji Hosotani, Kioxia Corporation|Toru Nakanishi, Kioxia Corporation|Daisuke Hagishima, Kioxia Corporation|Toshiya Ishikawa, Kioxia Corporation|Tatsuo Ogura, Kioxia Corporation|Shinya Naito, Kioxia Corporation|Takashi Kurusu, Kioxia Corporation|Sumiko Mano, Kioxia Corporation|Tsuyoshi Ogikubo, Kioxia Corporation|Motohiko Fujimatsu, Kioxia Corporation|Kikuko Sugimae, Kioxia Corporation|Mina Hatakeyama, Kioxia Corporation|Yuki Inuzuka, Kioxia Corporation|Yusuke Niki, Kioxia Corporation|Rieko Tanaka, Kioxia Corporation|Noboru Shibata, Kioxia Corporation|Hiroshi Nakamura, Kioxia Corporation|Makoto Fujiwara, Kioxia Corporation|Koji Matsuo, Kioxia Corporation|Yoshiro Shimojo, Kioxia Corporation|Fumitaka Arai, Kioxia Corporation|Masaki Kondo, Kioxia Corporation|Tomohiro Oki, Kioxia Corporation|Masaru Kito, Kioxia Corporation
We propose a novel architecture, advanced horizontal channel flash (HCF), that uses Local Block Interconnect, staggered Select Gates, and memory cells employing Floating Gate based charge storage. HCF with minimized 2F2 cell shows better cell efficiency than that of Vertical Gate NAND designs with 6F2 cell and of conventional 3D flash memory with 4F2 cell. Furthermore, HCF maintains the advantage of the VG-type devices, where cell current remains independent of the stacking number. The operation of the HCF device has been confirmed by TCAD simulation and a test vehicle fabricated using a 3D flash compatible process flow.
Type: Technical Session
Wednesday, December 11, 2024 - 09:00 AM
30 | MT | Ferroelectric FET and NAND Flash Memories
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