Monday, December 9 • 1:35 PM - 2:00 PM PST
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Location: Continental 5
Title: 6-1 | Oxide-semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture
Description:
Authors: Shosuke Fujii, Kioxia Corporation|Tseng Fu Lu, Nanya Technology Corporation|Keiji Ikeda, Kioxia Corporation|Szu Yao Chang, Nanya Technology Corporation|Kei Sakamoto, Kioxia Corporation|Lu Wei Chung, Nanya Technology Corporation|Mutsumi Okajima, Kioxia Corporation|Jhen-Yu Tsai, Nanya Technology Corporation|Toshifumi Kuroda, Kioxia Corporation|Chung Peng Hao, Nanya Technology Corporation|Shinji Miyano, Kioxia Corporation|Mei Chuan Peng, Nanya Technology Corporation|Kimitoshi Okano, Kioxia Corporation|Martin Sillero, Nanya Technology Corporation|Akihiro Kajita, Kioxia Corporation|Chung Lin Huang, Nanya Technology Corporation|Takeshi Fujimaki, Kioxia Corporation|Chiang-Lin Shih, Nanya Technology Corporation
We demonstrated the world’s first 4F2 gate-all-around Oxide-semiconductor Channel Transistor DRAM (OCTRAM). The InGaZnO VCT achieved Ion=15uA/cell (Vg=2V) and Ioff=1aA/cell (Vg=-1V). A 275Mbit OCTRAM array was fabricated with WL 54nm/BL 63nm pitches and showed successful operation in the designed voltage range, making it a breakthrough technology for future 4F2 DRAM.
Type: Technical Session
Monday, December 9, 2024 - 01:30 PM
6 | MT | DRAM with Oxide Semiconductor Channel
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