4 | RSD | Memory and Ferroelectric Material Reliability

Event Time

Originally Aired - Monday, December 9 1:30 PM - 5:20 PM PST

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Event Location

Location: Continental 1-3


Event Information

Title: 4 | RSD | Memory and Ferroelectric Material Reliability

Description:

In this session, we will discuss about the Memory and Ferroelectric Material Reliability. Firstly, the MIKFIS gate stack, combining ferro and non-ferroelectric HfO₂, addresses thickness and reliability issues in 3D NAND, achieving a record memory window of 12.2 V and stable 10-years retention, making it a promising solution for advanced 3D NAND technology. Secondly, Highly reliable metal-ferroelectric-metal (MFM) capacitors with β-W electrodes achieve 70 μC/cm² remnant polarization, 6.3 MV/cm breakdown field, and over 5×10¹² cycles endurance, thanks to β-W’s low lattice misfit with HZO and negligible oxygen vacancy. Thirdly, A WO₃ layer in ultra-thin HZO capacitors boosts endurance by 1000× at 125°C and reduces oxygen vacancy issues, improving performance at high temperatures and benefiting 3D memory applications. Next, they show that adding a TiO2 layer in MIFIS FeFETs improves memory window by 35% and prevents disturbances even after 10^4 stress cycles, by reducing charge trapping and enhancing polarization switching. In the fifth paper, highly reliable HZO FeRAM technology shows up to 10¹² endurance cycles at 85°C with ±1.2V, 100% yield for 256 kb 1T1C chips, and 20 ns operation speed, achieved through advanced nanocrystalline domain inspection, indicating improved performance and scalability. Next, they demonstrate H2 plasma treatment (HPT) significantly improves FeFET performance by reducing oxygen vacancies and interfacial traps, enhancing polarization switching, endurance, conductance, and linearity, and increasing thermal stability for FeCAM cells. Next, they investigated the physical mechanism of memory window (MW) narrowing in HZO/Si FeFETs and found that it can be mitigated by adjusting hold voltage. As a final paper, they introduce ultra-high vacuum re-annealing as a recovery strategy, showing that low-temperature re-annealing can restore Pr by up to 112%, advancing HfO-based memory technologies.

Type: Technical Session


Presentations

Monday, December 9, 2024 - 01:30 PM
4-0 | Welcome

Monday, December 9, 2024 - 01:35 PM
4-1 | Superior QLC Retention (10 years, 85°C) and Record Memory Window (12.2 V) by Gate Stack Engineering in Ferroelectric FET: from “MIFIS” to “MIKFIS”

Monday, December 9, 2024 - 02:00 PM
4-2 | Uniform and Fatigue-Free Ferroelectric HZO with Record EBD of 6.3MV/cm and Record Final 2Pr of 64μC/cm2 at Record 5E12 Endurance Using Low Lattice Misfit (2.9%) &[beta]-W

Monday, December 9, 2024 - 02:25 PM
4-3 | Self-Healing Ferroelectric Capacitors with ~1000x Endurance Improvement at High Temperatures (85–125˚C)

Monday, December 9, 2024 - 03:15 PM
4-4 | Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-free 3D NAND Cell: Experimental and Modeling

Monday, December 9, 2024 - 03:40 PM
4-5 | Highly Reliable and High-Yield 1.2V HfZrOx FRAM and its Physical Origin via Micrometer-Scale Nanocrystalline Domain Analysis

Monday, December 9, 2024 - 04:05 PM
4-6 | Enhancing FeFET Performance through H2 Plasma Treatment: Improving Stability, Conductance, and Hamming Distances in FeCAM Designs

Monday, December 9, 2024 - 04:30 PM
4-7 | Unveiling memory-window narrowing mechanism after bipolar cycling in HZO/Si FeFETs: Critical role of hole trap generation and carrier de-trapping behavior

Monday, December 9, 2024 - 04:55 PM
4-8 | Polarization degradation and recovery strategies of hafnia-based ferroelectric capacitors after thermal budget in Back-End of Line process


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